Bildergalerie: Description 50817765 in Directory 30
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DTXT_TITLE: IBM System p5, Modell 590 (2006) DOC_TYPE: Image ARCHIV: 1000 FIL_ID: 50817765 FIL_ORG: 85574.tif FIL_EXT: jpg FIL_WIDTH: 709 FIL_HEIGHT: 1417 FIL_RES: 300 FIL_SIZE: 51137 FIL_COLOR: RGB FIL_ROTATE: FIL_CLIP: FIL_CROP: FIL_IMG: FIL_PATH: DOC_SPERRVERMERK: DOC_INPUT: 23-05-2006 11:57:21 DOC_UPDATE: 25-07-2006 13:41:06 DOC_STATUS: 1 DOC_KATALOG: 1 DOC_SPERR: 1 BESCHREIBUNG: IBM stellte am 25.7.2006 zwei neue POWER 5+ Prozessor-basierte Server vor: das IBM System p5 590 und das 64-Wege-Modell IBM System p5 595 mit einer Leistung von ca. vier Millionen TPC-C Transaktionen pro Minute. Dabei kommt erstmalig mit €Dual Stress€ eine Prozessortechnologie zum Einsatz, die bisher nur in der Unterhaltungselektronik zu finden war und nun bis zu 24 Prozent höhere Transistorgeschwindigkeiten ermöglicht. The IBM System p5 590 server uses fifth-generation 64-bit IBM POWER5 technology in up to 32-core symmetric multiprocessing (SMP) configurations with Advanced POWER Virtualization to provide the performance, flexibility, scalability, manageability and security features needed for the consolidation of mission-critical AIX 5L and Linux applications on a single system to save on hardware, software, energy and space costs. The new systems leverage IBM's leadership Virtualization Engine technology offerings to accommodate up to 10 virtual servers - or partitions - per processor core, enabling clients to consolidate multiple systems and distributed applications - even entire IT infrastructures - on a single box. One of the most significant processor breakthroughs in recent years - called Dual Stress - is driving the dramatic leap in server performance. Developed by IBM initially for state-of-the-art video gaming consoles introduced late last year, dual stress solves a fundamental conundrum of physics that had vexed processor designers since the dawn of the semiconductor industry. The scientists discovered a method of simultaneously stretching and compressing the silicon to deliver a dramatic surge in system performance and power efficiency. The breakthrough process is designed to result in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology. Dual Stress can also be used to lower power consumption. BU: RUBRIK: Produkte und Anwendungen PRODUKTFAMILIE: IBM System p5 PRODUKT: IBM System p5, Modell 590 BILDART: Produktfoto STICHWORTE: p5 590, p5-590, p590 IBM_NUMMER: 85573 FARBE: farbig FORMAT: Hoch ORIGINAL: Digital BILDRECHTE: IBM BILDQUELLE: https://217.28.160.76:9090/index.jsp: 590595Sf-06 EINGABE: Häßler EXPORTPATH: 30/images/50817765.jpg |
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