Bildergalerie: Description 50821675 in Directory 30
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DTXT_TITLE: Dual Stress Technology in der IBM Chip-Fabrik in East Fishkill, New York, USA (2006) DOC_TYPE: Image ARCHIV: 1000 FIL_ID: 50821675 FIL_ORG: 85781.jpg FIL_EXT: jpg FIL_WIDTH: 1406 FIL_HEIGHT: 2100 FIL_RES: 300 FIL_SIZE: 1130129 FIL_COLOR: RGB FIL_ROTATE: FIL_CLIP: FIL_CROP: FIL_IMG: FIL_PATH: DOC_SPERRVERMERK: DOC_INPUT: 25-07-2006 10:56:22 DOC_UPDATE: 15-02-2007 10:42:49 DOC_STATUS: 1 DOC_KATALOG: 1 DOC_SPERR: 1 BESCHREIBUNG: IBM System p5 models 590 and 595 use dual stress microprocessor technology IBM's Dual Stress technology breakthrough (code-named Squeezebox), deployed first in video game platforms and now in the most powerful commercial computer, was developed at IBM's facility in East Fishkill, NY. One of the most significant processor breakthroughs in recent years - called Dual Stress - is driving the dramatic leap in server performance. Developed by IBM initially for state-of-the-art video gaming consoles introduced late last year, dual stress solves a fundamental conundrum of physics that had vexed processor designers since the dawn of the semiconductor industry. The scientists discovered a method of simultaneously stretching and compressing the silicon to deliver a dramatic surge in system performance and power efficiency. The breakthrough process is designed to result in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology. Dual Stress can also be used to lower power consumption. Faster, more power-efficient transistors are the building blocks of higher performance, lower power processors. As transistors get smaller, they operate faster, but also risk operating at higher power and heat levels due to electrical leakage or inefficient switching. IBM's strained silicon helps overcome these challenges. Dual Stress enhances the performance of both types of semiconductor transistors, called n-channel and p-channel transistors, by stretching silicon atoms in one transistor and compressing them in the other. Dual Stress technique works without the introduction of challenging, costly new production techniques, allowing for its rapid integration into volume manufacturing using standard tools and materials. BU: RUBRIK: Forschung Technologie Fertigung PRODUKTFAMILIE: Microelectronics BILDART: Innenaufnahme STICHWORTE: Chips IBM_NUMMER: 85781 FARBE: farbig FORMAT: Hoch ORIGINAL: Digital BILDRECHTE: IBM BILDQUELLE: IBM Pressroom USA EINGABE: Häßler EXPORTPATH: 30/images/50821675.jpg |
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