Bildergalerie: Description 50852628 in Directory 31
Bipolarer <>
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DTXT_TITLE: Bipolarer Transistor verbraucht 80 Prozent weniger Strom (2007) DOC_TYPE: Image ARCHIV: 1000 FIL_ID: 50852628 FIL_ORG: 87647.jpg FIL_EXT: jpg FIL_WIDTH: 1000 FIL_HEIGHT: 473 FIL_RES: 100 FIL_SIZE: 85903 FIL_COLOR: RGB FIL_ROTATE: FIL_CLIP: FIL_CROP: FIL_IMG: FIL_PATH: DOC_SPERRVERMERK: DOC_INPUT: 22-06-2007 15:14:41 DOC_UPDATE: 20-08-2008 14:00:26 DOC_STATUS: 1 DOC_KATALOG: 1 DOC_SPERR: 1 BESCHREIBUNG: IBM's bipolar transistor with silicon-germanium base built on CMOS-compatible SOI wafer. Electrons come down from the poly-silicon emitter, accelerate through the silicon germanium (SiGe) base, and make a turn in the SOI layer towards the collector contact electrode. With zero or low voltage applied to the SOI wafer, the current path in the SOI is long, which results in low electric field in the SOI and makes the device suitable for high voltage applications (pink arrow); with high positive voltage applied to the SOI wafer, the collector contact is virtually extended all the way to the back of the SOI layer under the emitter. The current path is thus shorter (green arrow), making the device suitable for high speed applications. BU: RUBRIK: Forschung Technologie Fertigung BILDART: Infografik IBM_NUMMER: 87647 FARBE: farbig BILDRECHTE: IBM BILDQUELLE: IBM Domino Research, 20030930_bipolar.jpg EINGABE: Häßler PRODUKTFAMILIE: Microelectronics PRODUKT: Chips, SiGe, CMOS FORMAT: Quer ORIGINAL: Digital EXPORTPATH: 31/images/50852628.jpg |
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